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Optimization of Scattering Parameters Through Numerical Investigation of One-bit RF MEMS Switch over Ku, K and Ka Band

[ Vol. 13 , Issue. 3 ]

Author(s):

Pampa Debnath, Ujjwal Mondal and Arpan Deyasi*   Pages 353 - 359 ( 7 )

Abstract:


Aim: Computation of loss factors for one-bit RF MEMS switch over Ku, K and Ka-band for two different insulating substrates.

Objective: Numerical investigation of return loss, insertion loss, isolation loss are computed under both actuated and unactuated states for two different insulating substrates of the 1-bit RF MEMS switch, and corresponding up and down-capacitances are obtained.

Methods: The unique characteristics of a 1-bit RF MEMS switch of providing higher return loss under both actuated and unactuated states and also of isolation loss with negligible insertion loss makes it as a prime candidate for phase shifter application. This is presented in this manuscript with a keen focus on improvement capability by changing transmission line width, and also of overlap area; where dielectric constant of the substrate also plays a vital role.

Results: The present work exhibits very low down-capacitance over the spectrum whereas a considerable amount of up-capacitance. Also when overall performance in terms of all loss parameters are considered, switch provides very low insertion loss, good return loss under actuated state and standard isolation loss.

Conclusion: Reduction of transmission line width of about 33% improved the performance of the switch by increasing isolation loss. Isolation loss of -40 dB is obtained at actuated condition in higher microwave spectra for SiO2 at higher overlap area. Down capacitance of ~ 1dB is obtained which is novel as compared with other published literature. Moreover, a better combination of both return loss, isolation loss and insertion loss are reported in this present work compared with all other published data so far.

Keywords:

Return loss, insertion loss, isolation loss, overlap area, actuated state, unactuated state, RF-MEMS switch.

Affiliation:

Department of Electronics and Communication Engineering, RCC Institute of Information Technology, Kolkata, Canal South Road, Beliaghata, Department of Applied Physics, University of Calcutta, Kolkata, Department of Electronics and Communication Engineering, RCC Institute of Information Technology, Kolkata, Canal South Road, Beliaghata



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