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Transient Analysis of Poly (3,4-Ethylenedioxythiophene) Poly (Styrenesulphonate) (PEDOT: PSS)- Polyfluorene Organic Polymer Layer Light Emitting Diode

[ Vol. 12 , Issue. 3 ]


Neha Jain*, Om P. Sinha, Sujata Pandey and Rajiv K. Singh   Pages 226 - 231 ( 6 )


In this paper, we have simulated a bi-organic polymer multilayered Light Emitting Diode (LED). It presents the transient analysis of the OLED device. Poly (9, 9-dioctylfluorene) (PFO) is used as an interlayer between Hole Transport Layer (HTL) and Lithium fluoride (LiF) which is responsible for enhancing the electron injection in the device. Hence, it is called as Electron Injection Layer (EIL). PFO acts as a photo catalyst, which improves the device performance. Silvaco TCAD is used for the extraction of electro-optical characteristics. It is done using 1 and 2-dimentional simulation process. Solution of differential equations is derived from Langevin recombination model. Transient response analysis and comparison is done for exciton density and anode current for different thickness of PFO layer. It is found that transient response with respect to anode current and exciton density is better when a Poly (9, 9-dioctylfluorene) (PFO) layer is inserted between anode and Hole Injection Layer (HIL). The analysis and comparison is done for 65 nm, 120 nm and 240 nm thick layers and it is observed that transient response is best at 65 nm layer thicknesses for both exciton density and anode current. Also, J-V characteristics has been found for the structure where current density is 1.8 A/ m2 which is remarkably high as compared to the devices discussed in prose. The results agree well with that available in literature. Poly (3,4-ethylenedioxythiophene) poly (styrenesulphonate) (PEDOT:PSS) results in low operating voltage of the device which is 4V here.




Department of Electronics and Communication Engineering, Amity University UP, Noida, Amity Institute of Nanotechnology, Amity University UP, Noida, Amity School of Technology, Amity University UP, Noida, Advanced Material & Devices Division, CSIR-National Physical Laboratory, New Delhi

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