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Critical Atomic-level Processing Technologies: Remote Plasma-enhanced Atomic Layer Deposition and Atomic Layer Etching

[ Vol. 10 , Issue. 2 ]

Author(s):

Guangjie Yuan*, Haohao Li, Bo Shan and Johan Liu   Pages 76 - 83 ( 8 )

Abstract:


As feature sizes of devices shrink every year, deposition and etching processes change to be very challenge, especially for sub-7 nm technology node. The acceptable variability of feature size is expected to be several atoms of silicon/germanium in the future. Therefore, Remote Plasma-Enhanced Atomic Layer Deposition (RPE-ALD) and Atomic Layer Etching (ALE) change to be more and more important in the semiconductor fabrication. Due to their self-limiting behavior, the atomic-scale fidelity could be realized for both of them in the processes. Compared with traditional Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD) methods, atomic-scale thickness controllability and good conformality can be achieved by RPE-ALD. Unlike conventional plasma etching, atomicscale precision and excellent depth uniformity can be achieved by ALE. The fundamentals and applications of RPE-ALD and ALE have been discussed in this paper. Using the combination of them, atomic-level deposition/etch-back method is also mentioned for achieving high quality ultra-thin films on three dimensional (3D) features.

Keywords:

Plasma-enhanced atomic layer deposition, atomic layer etching, atomic-level deposition/etch-back method, selflimiting behavior, low deposition temperature, ultra-large scale integration system.

Affiliation:

SMIT Center, School of Automation and Mechanical Engineering, Shanghai University, Shanghai, SMIT Center, School of Automation and Mechanical Engineering, Shanghai University, Shanghai, SMIT Center, School of Automation and Mechanical Engineering, Shanghai University, Shanghai, SMIT Center, School of Automation and Mechanical Engineering, Shanghai University, Shanghai

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